Tokyo, Japan

Hiroki Niwa


Average Co-Inventor Count = 8.2

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2023-2025

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7 patents (USPTO):

Title: Innovations of Hiroki Niwa

Introduction

Hiroki Niwa is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of technology, particularly in the areas of negative pressure generation and semiconductor devices. With a total of seven patents to his name, Niwa's work reflects a commitment to advancing engineering solutions.

Latest Patents

One of his latest patents is a negative pressure-generating structure and actuator. This invention is designed to adjust the pressure at the tip of a shaft in an actuator, which is configured to generate a negative pressure to pick up a workpiece. The structure includes an insertion hole for the shaft, an inner space that communicates with the hollow part of the shaft, and an air passage that generates negative pressure at the tip of the shaft. Another notable patent is related to a semiconductor device and its manufacturing method. This technology aims to suppress the removal of collector layers during the planarization process while addressing the snapback phenomenon. The semiconductor device features a drain layer of the first conductivity type and multiple collector layers of the second conductivity type, with a dummy layer interposed between them.

Career Highlights

Hiroki Niwa has worked with notable companies such as THK Co., Ltd. and Mitsubishi Electric Corporation. His experience in these organizations has allowed him to develop and refine his innovative ideas, contributing to the advancement of technology in his field.

Collaborations

Some of his coworkers include Katsuya Fukushima and Masashi Ishii. Their collaboration has likely played a role in the development of his innovative patents and projects.

Conclusion

Hiroki Niwa's contributions to technology through his patents demonstrate his expertise and innovative spirit. His work continues to influence advancements in negative pressure systems and semiconductor devices.

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