Osaka, Japan

Hirofumi Ohno

This inventor holds 1 USPTO granted patent. Top assignee: Nitto-Denko Corporation. Active years: 1997.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hirofumi Ohno. Retrieved from https://idiyas.com/inventor/hirofumi-ohno-dhdis0qa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 11(Granted Patents)


Company Filing History:


Years Active: 1997

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1 patent (USPTO):Explore Patents

Title: Hirofumi Ohno: Innovator in Semiconductor Sealing Technology

Introduction

Hirofumi Ohno is a prominent inventor based in Osaka, Japan. He is known for his significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique resin tablet designed for sealing semiconductors.

Latest Patents

Hirofumi Ohno holds 1 patent for his invention titled "Resin tablet for sealing semiconductor." This patent describes a resin tablet formed by solidifying a molten thermosetting resin composition through cooling. The tablet is characterized by a volatile matter content of 0.05% by weight or less, and it contains no gelled particles for those of 60 mesh and 10 ppm or less for particles of 100 mesh.

Career Highlights

Hirofumi Ohno is currently employed at Nitto-Denko Corporation, where he continues to advance his research and development efforts. His work has been instrumental in enhancing the reliability and performance of semiconductor devices.

Collaborations

Hirofumi has collaborated with notable colleagues, including Shinichi Kanai and Tomohiro Taruno. Their combined expertise has contributed to the success of various projects within the semiconductor industry.

Conclusion

Hirofumi Ohno's innovative contributions to semiconductor sealing technology exemplify the impact of dedicated inventors in advancing modern technology. His work continues to influence the industry and pave the way for future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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