Niigata, Japan

Hirofumi Nishijo

This inventor holds 1 USPTO granted patent. Top assignee: Shin-Etsu Handotai Co., Ltd.. Active years: 2001.


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: Hirofumi Nishijo: Innovator in Silicon Wafer Analysis

Introduction

Hirofumi Nishijo is a notable inventor based in Niigata-ken, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the analysis of silicon wafers. His work is essential for improving the quality and efficiency of semiconductor manufacturing.

Latest Patents

Hirofumi holds a patent for a "Method for analyzing impurities within silicon wafer." This innovation addresses critical challenges in the semiconductor industry by providing a reliable method for detecting impurities that can affect the performance of silicon wafers.

Career Highlights

Nishijo is currently employed at Shin-Etsu Handotai Co., Ltd., a leading company in the semiconductor industry. His expertise and innovative approach have positioned him as a valuable asset to the company. With 1 patent to his name, he continues to contribute to advancements in semiconductor technology.

Collaborations

Throughout his career, Hirofumi has collaborated with esteemed colleagues, including Yutaka Ohta and Akira Kosugi. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Hirofumi Nishijo's work in analyzing impurities within silicon wafers exemplifies the importance of innovation in the semiconductor industry. His contributions continue to impact the field positively, ensuring advancements in technology and manufacturing processes.

Profile summary based on public USPTO records.
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