This inventor holds 1 USPTO granted patent. Top assignees: Mitsuba Corporation, National Institute for Materials Science. Active years: 2017.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
1 out of 533 
1 out of 575 
Years Active: 2017
Title: Hirofumi Fujiu: Innovator in P-Type Semiconductors
Introduction
Hirofumi Fujiu is a notable inventor based in Kiryu, Japan. He has made significant contributions to the field of semiconductor technology. His work focuses on the development of p-type semiconductors, which are essential for various electronic applications.
Latest Patents
Hirofumi Fujiu holds a patent for a p-type semiconductor composed of magnesium, silicon, tin, and germanium. The patent describes a manufacturing method for this semiconductor, which is formed by sintering a compound represented by the general chemical formula: MgSiSnGe. The p-type semiconductor has specific compositional ranges and relationships that enhance its performance in electronic devices. He has 1 patent to his name.
Career Highlights
Throughout his career, Hirofumi Fujiu has worked with esteemed organizations such as the National Institute for Materials Science and Mitsuba Corporation. His experience in these institutions has allowed him to refine his expertise in materials science and semiconductor manufacturing.
Collaborations
Hirofumi has collaborated with notable colleagues, including Yukihiro Isoda and Satoki Tada. Their joint efforts have contributed to advancements in semiconductor technology.
Conclusion
Hirofumi Fujiu's innovative work in p-type semiconductors showcases his dedication to advancing technology in the field. His contributions are significant and continue to influence the semiconductor industry.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile