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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9666782 B1

PDFFull Text
Date of Patent:
May. 30, 2017

Filed:

Jul. 10, 2014

P-type semiconductor composed of magnesium, silicon, tin, and germanium, and method for manufacturing the same

Applicants:

National Institute for Materials Science, Tsukuba-shi, JP;

Mitsuba Corporation, Kiryu-shi, Gunma, JP;

Inventors:

Yukihiro Isoda, Tsukuba, JP;

Satoki Tada, Kiryu, JP;

Hirofumi Fujiu, Kiryu, JP;

Assignees:

NATIONAL INSTITUTE FOR MATERIALS SCIENCE, Tsukuba-shi, JP;

MITSUBA CORPORATION, Kiryu-shi, JP;

Attorney:

Oliff PLC

Primary Examiner:

Kyoung Lee

Int. Cl.
CPC ...
H01L 35/34 (2006.01); B22F 3/14 (2006.01); C01B 33/06 (2006.01); C22C 23/00 (2006.01); H01L 35/14 (2006.01); C22C 1/04 (2006.01); C22C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 35/34 (2013.01); B22F 3/14 (2013.01); C01B 33/06 (2013.01); C22C 1/04 (2013.01); C22C 13/00 (2013.01); C22C 23/00 (2013.01); H01L 35/14 (2013.01); B22F 2301/40 (2013.01); C22C 1/0408 (2013.01);
Abstract

A manufacturing method for a p-type semiconductor formed by sintering a compound represented by the general chemical formula: MgSiSnGe(where X+Y+Z=1, X>0, and Y>0, Z>0). The p-type semiconductor has a composition in which X is in the range of 0.00<X≦0.25, and Z satisfies the relationship: −1.00X+0.40≧Z≧−2.00X+0.10, where Z>0.00, and Y is in the range of 0.60≦Y≦0.95, and Z satisfies either of the relationships: −1.00Y+1.00≧Z≧−1.00Y+0.75, where 0.60≦Y≦0.90 and Z>0.00, and −2.00Y+1.90≧Z≧−1.00Y+0.75, where 0.90≦Y≦0.95 and Z>0.00.

Find Patent Forward Citations

Isoda, Yukihiro. (2017). P-type semiconductor composed of magnesium, silicon, tin, and germanium, and method for manufacturing the same (U.S. Patent No. 9666782). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9666782

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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