Hiroaki Nakai

This inventor holds 8 USPTO granted patents. Top assignees: Mitsubishi Denki Kabushiki Kaisha, Renesas Technology Corp.. Active years: 1996-2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroaki Nakai. Retrieved from https://idiyas.com/inventor/hiroaki-nakai-g5ponlmo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 8

% Patents Active = 62.5

Average Co-Inventor Count = 2.1

ph-index = 6

Forward Citations = 119(Granted Patents)

Company Filing History:

6 out of 21,351

Mitsubishi Denki Kabushiki Kaisha

patents

2 out of 3,781

Renesas Technology Corp.

patents

Years Active: 1996-2006

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8 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7106129 - Semiconductor device less susceptible to variation in threshold voltage (2006-09-12),

2. 6771117 - Semiconductor device less susceptible to variation in threshold voltage (2004-08-03),

3. 6549480 - Semiconductor integrated circuit allowing internal voltage to be measured and controlled externally (2003-04-15),

4. 6529418 - Non-volatile semiconductor memory device conducting data write and erase operations based on a prescribed unit region (2003-03-04),

5. 6335882 - Nonvolatile semiconductor memory device capable of erasing blocks despite variation in erasing characteristic of sectors (2002-01-01),

6. 6069518 - Semiconductor device allowing generation of desired internal voltage at (2000-05-30),

7. 5917354 - Circuit for resetting output of positive/negative high voltage (1999-06-29),

8. 5521864 - Non-volatile semiconductor memory device allowing fast verifying (1996-05-28),

Title: Hiroaki Nakai: Innovator in Semiconductor Technology

Introduction

Hiroaki Nakai is a prominent inventor based in Hyogo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work focuses on enhancing the performance and reliability of semiconductor devices.

Latest Patents

One of Nakai's latest patents involves a semiconductor device that is less susceptible to variations in threshold voltage. This innovation features a threshold compensating circuit that generates a bias potential, VBIAS, which offsets the threshold voltage of a MOS transistor by a specified value. By applying a gate-source voltage that compensates for variations in threshold voltage, the device improves stability. Additionally, using a differential amplifier with this transistor as a current source allows for the implementation of a voltage down-converter that is less affected by process variations and temperature changes.

Career Highlights

Throughout his career, Hiroaki Nakai has worked with notable companies, including Mitsubishi Electric Corporation and Renesas Technology Corporation. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Nakai has collaborated with several talented individuals in his field, including Shinichi Kobayashi and Akira Hosogane. These partnerships have fostered a collaborative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Hiroaki Nakai's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence advancements in the field, ensuring greater reliability and performance in semiconductor devices.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]