Kawasaki, Japan

Hiroaki Ishiwata

This inventor holds 4 USPTO granted patents. Top assignee: Kabushiki Kaisha Toshiba. Active years: 2002-2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroaki Ishiwata. Retrieved from https://idiyas.com/inventor/hiroaki-ishiwata-knw1keby

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.1

ph-index = 4

Forward Citations = 109(Granted Patents)


Company Filing History:


Years Active: 2002-2003

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4 patents (USPTO):Explore Patents

Title: Inventor Hiroaki Ishiwata: Pioneering Innovations in Solid-State Imaging

Introduction

Hiroaki Ishiwata is a distinguished inventor located in Kawasaki, Japan. With a remarkable portfolio of four patents, he has made significant contributions to the field of solid-state imaging technology. His inventive spirit and technical expertise have propelled advancements that enhance the performance and functionality of imaging systems.

Latest Patents

Ishiwata's latest patents showcase his ingenuity in solid-state imaging. One notable invention is the "MOS type solid-state imager and manufacturing method thereof." This patent describes a unique arrangement where a photodiode and a read gate are intricately formed within an element region. A standout feature includes the absence of a p-type punch-through preventing region directly underneath the n-type signal accumulating region of the photodiode, which is constructed within a p-type semiconductor substrate. This design is complemented by a p-type punch-through preventing region extending across the entire element region and beneath an insulative isolation layer to prevent punch-through between elements.

Another remarkable invention by Ishiwata is the "solid-state image sensor." This sensor incorporates a photodiode integrated within a p-type substrate or a p-type well, designed with a first n-type region to store photoelectrically converted signal charges. An innovative gate electrode is strategically positioned above the substrate to interface with the photodiode, while an n-type drain is located on the substrate opposite the photodiode. This arrangement includes a self-aligning second n-type region, which helps prevent the short-channel effect of the signal read transistor section, reduces residual signal charges in the photodiode, and ultimately minimizes noise to enhance sensor sensitivity.

Career Highlights

Hiroaki Ishiwata currently works at Kabushiki Kaisha Toshiba, a company renowned for its cutting-edge technological innovations. His role involves the ongoing development of advanced imaging technologies that push the boundaries of current capabilities in electronic devices and systems.

Collaborations

Throughout his career, Ishiwata has collaborated with esteemed colleagues, including Akiko Mori and Hisanori Ihara. These collaborations reflect a collective pursuit of excellence in technological research and development, further solidifying the innovative spirit at Toshiba.

Conclusion

Hiroaki Ishiwata stands out as a prominent inventor in the domain of solid-state imaging. With a focus on enhancing sensor performance through his patents, his contributions are shaping the future of imaging technology. As he continues to work alongside talented colleagues at Toshiba, Ishiwata’s innovations highlight the importance of collaborative efforts in driving forward technological advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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