The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2003
Filed:
Jun. 29, 2000
Applicant:
Inventors:
Hiroaki Ishiwata, Kawasaki, JP;
Yoshinori Iida, Tokyo, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/1062 ; H01L 3/1113 ;
U.S. Cl.
CPC ...
H01L 3/1062 ; H01L 3/1113 ;
Abstract
Part of a photodiode layer extends to a position under a gate electrode. The photodiode layer and a drain layer are separated by a punch-through stopper region. A surface shield layer is formed on the photodiode layer. When a voltage is applied to the gate electrode, the charge accumulated in the photodiode layer is transferred to the drain region via a channel formed under the gate electrode, not being affected by a potential barrier in the surface shield layer.
Quick Actions:
Ishiwata, Hiroaki. (2003). Solid-state image device and method of manufacturing the same (U.S. Patent No. 6504193). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6504193
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile