Hiroaki Haruna

Title: Hiroaki Haruna: Power Semiconductor Device Innovations

Introduction

Hiroaki Haruna is an inventor based in Tokyo, Japan, whose patent work focuses on power semiconductor devices and their manufacturing. He is associated with Mitsubishi Electric Corporation and is credited with 2 patents.

Latest Patents

Haruna’s latest patents address substrate design and the bonding of semiconductor elements using sintered metal.

“Power Semiconductor Device and Substrate with Dimple Region” describes a device with a semiconductor element bonded to a substrate using sintered metal bonding material. The substrate has dimples positioned outside the area directly beneath the element’s heat-generation unit. The patent describes forming the dimples before applying the bonding material, then bonding the element through heat and pressure.

“Power Semiconductor Device and Manufacturing Method for Power Semiconductor Device” also concerns a semiconductor element bonded to a substrate with sintered metal bonding material. It describes dimples placed outside the area directly beneath the heat-generation unit and a manufacturing process that applies the bonding material after forming the dimples, followed by bonding under heat and pressure.

Career Highlights

Haruna’s listed patent portfolio centers on power semiconductor devices, substrate features, and manufacturing methods for bonding semiconductor elements. His work is associated with Mitsubishi Electric Corporation.

Collaborations

Yuya Muramatsu and Kohei Yabuta are identified as Haruna’s coworkers.

Conclusion

Hiroaki Haruna’s patents highlight approaches to substrate design and semiconductor bonding intended for power devices, reflecting his innovation work at Mitsubishi Electric Corporation.