The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2023
Filed:
Apr. 29, 2022
Mitsubishi Electric Corporation, Tokyo, JP;
Kohei Yabuta, Tokyo, JP;
Takayuki Yamada, Tokyo, JP;
Yuya Muramatsu, Tokyo, JP;
Noriyuki Besshi, Tokyo, JP;
Yutaro Sugi, Tokyo, JP;
Hiroaki Haruna, Tokyo, JP;
Masaru Fuku, Tokyo, JP;
Atsuki Fujita, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
A power semiconductor device includes a substrate and a semiconductor element bonded onto a first surface of the substrate through use of a sintered metal bonding material. The substrate has a plurality of dimples formed in the first surface and located outside a location immediately below a heat generation unit of the semiconductor element. The sintered metal bonding material is supplied onto the substrate after the formation of the dimples, and the semiconductor element is bonded to the substrate through application of heat and a pressure thereto.