Noida, India

Himanshu Rathore

This inventor holds 1 USPTO granted patent. Top assignee: Arm Limited. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Himanshu Rathore. Retrieved from https://idiyas.com/inventor/himanshu-rathore

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Himanshu Rathore: Patent Inventor in Noida

Introduction

Himanshu Rathore is an inventor based in Noida, India. His patent work includes circuitry for integrated circuits that use Boolean logic gates and voltage-level shifting.

Latest Patents

Rathore is associated with 1 patent, titled “Multiple or Single Voltage Domain Logic Gate Circuitry.” The disclosed apparatuses, articles of manufacture, and techniques may implement, facilitate, or support integrated circuits comprising Boolean logic gate circuitry and corresponding voltage-level-shifting circuitry.

Career Highlights

Rathore works at Arm Limited. His patent reflects work on logic-gate circuitry designed to operate across one or multiple voltage domains.

Collaborations

Rathore’s listed coworker is Andy Wangkun Chen.

Conclusion

Himanshu Rathore’s patent on multiple or single voltage domain logic gate circuitry highlights his contribution to integrated-circuit design and voltage-level shifting.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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