Austin, TX, United States of America

Hieu Trong Huynh

This inventor holds 21 USPTO granted patents and 1 published patent application and 1 EPO patent, primarily in Cache Memory Management. Top assignee: International Business Machines Corporation. Active years: 2010-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hieu Trong Huynh. Retrieved from https://idiyas.com/inventor/hieu-trong-huynh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 21 

% Patents Active = 23.8

 

Average Co-Inventor Count = 4.9

ph-index = 2

Forward Citations = 9(Granted Patents)


Location History:

  • Pflugerville, TX (US) (2010 - 2015)
  • Austin, NY (US) (2015 - 2016)
  • Austin, TX (US) (2014 - 2023)

Company Filing History:


Years Active: 2010-2026

Loading Chart...
Loading Chart...
Areas of Expertise:
Cache Eviction
Memory Sparing
Dynamic Relocation
EDRAM Management
Bitline Deletion
Cache Correction
Concurrent Refresh
System Memory
Multilevel Cache
Data Transfers
Array Masking
Directory States
21 patents (USPTO):Explore Patents

Title: Inventor Hieu Trong Huynh

Introduction: Hieu Trong Huynh is a renowned inventor based in Austin, Texas, known for his groundbreaking contributions to various technological fields.

Latest Patents: Hieu Trong Huynh holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing his diverse range of expertise.

Career Highlights: With a career spanning over two decades, Hieu Trong Huynh has worked with leading research institutions and tech companies, consistently pushing the boundaries of innovation.

Collaborations: Throughout his career, Hieu Trong Huynh has collaborated with top engineers, scientists, and designers, fostering a culture of creativity and excellence in all his projects.

Conclusion: Hieu Trong Huynh's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…