Miyazaki, Japan

Hideyo Kuroki

This inventor holds 1 USPTO granted patent. Top assignee: Komatsu Electronic Metals Co., Ltd.. Active years: 2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hideyo Kuroki. Retrieved from https://idiyas.com/inventor/hideyo-kuroki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 12(Granted Patents)


Company Filing History:


Years Active: 2000

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1 patent (USPTO):Explore Patents

Title: The Innovations of Hideyo Kuroki

Introduction

Hideyo Kuroki is a notable inventor based in Miyazaki, Japan. He has made significant contributions to the field of semiconductor manufacturing. His innovative methods have paved the way for advancements in technology.

Latest Patents

Kuroki holds a patent for a "Method of manufacturing a semiconductor wafer." This patent describes a process where a sliced wafer is obtained from a semiconductor ingot. The rear and front surfaces of the sliced wafer are flattened through a double side simultaneous grinding process to remove any unevenness. Following this, the surfaces undergo a second grinding process. The back side of the wafer is then chamfered, and the surface is etched to enhance its quality.

Career Highlights

Kuroki is associated with Komatsu Electronic Metals Co., Ltd., where he has applied his expertise in semiconductor technology. His work has been instrumental in improving manufacturing processes within the industry.

Collaborations

Kuroki has collaborated with Masahiko Maeda, contributing to the development of innovative solutions in semiconductor manufacturing.

Conclusion

Hideyo Kuroki's contributions to semiconductor technology through his patent and work at Komatsu Electronic Metals Co., Ltd. highlight his role as a significant inventor in the field. His innovative methods continue to influence the industry today.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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