Kawasaki, Japan

Hidetaro Nishimura

This inventor holds 4 USPTO granted patents. Top assignees: Tokyo Shibaura Denki Kabushiki Kaisha, Kabushiki Kaisha Toshiba. Active years: 1984-1988.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hidetaro Nishimura. Retrieved from https://idiyas.com/inventor/hidetaro-nishimura

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.4

ph-index = 4

Forward Citations = 57(Granted Patents)


Company Filing History:


Years Active: 1984-1988

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4 patents (USPTO):Explore Patents

Title: Hidetaro Nishimura: Innovator in Ion Implant Technology

Introduction

Hidetaro Nishimura is a prominent inventor based in Kawasaki, Japan. He has made significant contributions to the field of semiconductor technology, particularly in ion implantation and integrated circuit memory devices. With a total of 4 patents to his name, Nishimura's work has had a lasting impact on the industry.

Latest Patents

One of his latest patents is the "Ion Implant Apparatus." This innovative apparatus forms ions from an ion source into an ion beam, which is then implanted into a target through an ion beam introduction tube. The design includes radiation means for radiating an electron beam, which is fixed on the ion beam introduction tube. The target reflects the electron beam to generate a reflectance beam, while also preventing the reflectance beam and secondary electron beam from directly radiating onto the target to be ion-implanted. This technology helps maintain high energy electrons away from the wafer surface, preventing negative charging and reducing measurement errors in dopant atom counts.

Another notable patent is the "Fuse Element for Integrated Circuit Memory Device." This fuse element is prepared from polycrystalline silicon and is deposited on an insulating layer on the main surface of a semiconductor substrate. The design features connecting portions with stepped surfaces that ensure tight contact with the insulating layer, enhancing the reliability of the integrated circuit memory.

Career Highlights

Throughout his career, Hidetaro Nishimura has worked with notable companies such as Tokyo Shibaura Denki and Toshiba Corporation. His experience in these organizations has allowed him to develop and refine his innovative ideas, contributing to advancements in semiconductor technology.

Collaborations

Nishimura has collaborated with talented individuals in the field, including Masakazu Shiozaki and Takaya Tsujimaru. These partnerships have fostered a creative environment that has led to the development of groundbreaking technologies.

Conclusion

Hidetaro Nishimura's contributions to ion implantation and integrated circuit memory devices have established him as a key figure in semiconductor innovation. His patents reflect a deep understanding of technology and a commitment to advancing the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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