The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 31, 1984

Filed:

Sep. 16, 1982
Applicant:
Inventors:

Hidetaro Nishimura, Kawasaki, JP;

Hiroshi Nozawa, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
2957 / ; 2957 / ; 148-15 ; 148187 ; 357 91 ; 427 531 ;
Abstract

A method of manufacturing semiconductor devices is disclosed. In the method, a redundancy circuit is formed by forming circuit elements making up an integrated circuit on a semiconductor substrate and a spare element connected to the circuit element through an electrically non-active region. Then, an impurity region is formed in the non-active region by introducing impurity and is electrically selectively activated with laser irradiation, whereby the circuit elements and the spare element are interconnected electrically.


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Nishimura, Hidetaro. (1984). Method of forming energy beam activated conductive regions between (U.S. Patent No. 4462150). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4462150

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