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For the Inventor, By the Inventor

Ibaraki, Japan

Hideo Fujiwara

This inventor holds 51 USPTO granted patents, primarily in Magnetic Recording Technology (CPC class 4286). Top assignees: Hitachi Maxell, Limited, Hitachi, Ltd., The University of Alabama. Active years: 1977-2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hideo Fujiwara. Retrieved from https://idiyas.com/inventor/hideo-fujiwara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 51

% Patents Active = 100.0

Average Co-Inventor Count = 4.4

ph-index = 15

Forward Citations = 631(Granted Patents)

Forward Citations (Not Self Cited) = 615(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Tachikawa, JA (1977)
  • Tachikawa, JP (1982 - 1984)
  • Toride, JP (1989)
  • Tokorozawa, JP (1984 - 1990)
  • Ibaragi, JP (1987 - 1990)
  • Ibaraki, JP (1988 - 1996)
  • Tokyo, JP (1997)
  • Ibaraki-ken, JP (1996 - 1999)
  • Tuscaloosa, AL (US) (1997 - 2009)
  • Duncanville, AL (US) (2009)

Company Filing History:

goldMedal28 out of 1,112 
 
Hitachi Maxell, Limited
 patents
silverMedal24 out of 42,743 
 
Hitachi, Ltd.
 patents
bronzeMedal4 out of 330 
 
The University of Alabama
 patents
4. 2 out of 2,333 
 
Hitachi Metals, Ltd.
 patents
5. 1 out of 39,378 
 
Fujitsu Corporation
 patents
6. 1 out of 56 
 
Hitachi Maxwell, Ltd.
 patents
7. 1 out of 256 
 
Research Development Corporation of Japan
 patents
8. 1 out of 2,887 
 
Victor Company of Japan, Limited
 patents
where one patent can have more than one assignee

Years Active: 1977-2009

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Areas of Expertise:
Toggle-MRAM
Spin-Valve Element
Magneto-Optical Recording
Giant Magnetoresistive Effect
Magnetic Heads
Soft Magnetic Materials
Optical Data Recording
Amorphous Magnetic Alloy
Perpendicular Magnetic Recording
Thin-Film Magnetic Head
Magnetic Recording Medium
Composite Magnetic Head
51 patents (USPTO):Explore Patents
1. 7569902 - Enhanced toggle-MRAM memory device (2009-08-04),
2. 7538987 - CPP spin-valve element (2009-05-26),
3. 6560077 - CPP spin-valve device (2003-05-06),
4. 5965286 - Magneto-optical recording medium (1999-10-12),
5. 5783320 - Magneto-optical recording medium and process for producing the same (1998-07-21),
6. 5648885 - Giant magnetoresistive effect sensor, particularly having a multilayered (1997-07-15),
7. 5639563 - Magneto-optical recording medium (1997-06-17),
8. 5639547 - Magnetic heads and magnetic recording reproducing devices using magnetic (1997-06-17),
9. 5637411 - Magneto-optical recording medium and process for producing the same (1997-06-10),
10. 5543221 - Magnetic recording medium (1996-08-06),
11. 5480694 - Magnetic recording medium (1996-01-02),
12. 5139884 - Magnetic recording medium comprising an aluminum substrate in which (1992-08-18),
13. 5135818 - Thin soft magnetic film and method of manufacturing the same (1992-08-04),
14. 5068152 - Magnetic recording medium (1991-11-26),
15. 5068144 - Perpendicular magnetic recording medium and method for producing the same (1991-11-26),

Title: Hideo Fujiwara: A Pioneer in Memory Device Innovations

Introduction: Hideo Fujiwara, an accomplished inventor based in Ibaraki, Japan, is recognized for his significant contributions to the field of memory devices. With an impressive portfolio of 51 patents, his work continues to influence advancements in magnetic random-access memory (MRAM) technology.

Latest Patents: Among his latest innovations, Fujiwara developed the Enhanced Toggle-MRAM Memory Device, which utilizes an SAF composite, lowering the operating field substantially while ensuring a wide operating field margin and high thermal stability. This groundbreaking device significantly enhances MRAM performance by achieving high thermal stability characteristics with minimal current usage. Additionally, he has patented a CPP Spin-Valve Element formed on a substrate, featuring a free layer structure with at least one ferromagnetic layer and a pinned layer structure. This design effectively prevents magnetic coupling between the free and pinned layer while allowing electric currents to traverse, thus optimizing device functionality.

Career Highlights: Hideo Fujiwara has built his career with prestigious companies, including Hitachi Maxell, Limited and Hitachi, Ltd. His innovative approach and technical expertise have positioned him as a leading figure in memory device research and development.

Collaborations: Throughout his career, Fujiwara has collaborated with notable coworkers such as Noriyuki Kumasaka and Mitsuhiro Kudo. Their joint efforts have led to advancements that further the capabilities of memory technology.

Conclusion: Hideo Fujiwara's remarkable achievements in the field of memory devices underscore his status as a key innovator. With a robust portfolio of patents, his contributions set the stage for future developments in MRAM technology, showcasing the profound impact of his work on the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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