Hitachi Maxell, Limited

Hitachi, Ltd.

University of Alabama

Hitachi Metals, Ltd.

Fujitsu Corporation

Victor Company of Japan, Limited

Research Development Corporation of Japan

Hitachi Maxwell, Ltd.

Hideo Fujiwara

Noriyuki Kumasaka

Mitsuhiro Kudo

Shigekazu Otomo

Osamu Kitakami

Takeo Yamashita

Osamu Inagoya

Takeshi Tottori

Yoshihiro Shiroishi

Noritoshi Saito

Kiminari Shinagawa

Norio Ohta

Katsusuke Shimazaki

Takeshi Kimura

Masafumi Yoshihiro

Hideo Daimon

Yasutaro Uesaka

Satoru Ohnuki

Yukinori Yamada

Kazuo Shiiki

Shinji Takayama

Tsuyoshi Maro

Kunio Wakai

Teizo Tamura

Yukio Ichinose

Masashi Hayashi

Hirosuke Mikami

Hitoshi Watanabe

Isamu Yuito

Eiji Koyama

Sadao Hishiyama

Akito Sakemoto

Masashi Suenaga

Kazuo Ichino

Yoichi Ogawa

Osamu Saito

Nobuyuki Sugishita

Masatoshi Hashimoto

Hisamitsu Kamezaki

Noriyuki Ogihara

Michiyasu Itoh

Nobuo Kobayashi

Minoru Yamano

Yoshinori Shirai

Hitoshi Furusho

Hiroyuki Suzuki

Masaaki Futamoto

Yutaka Sugita

Hitoshi Nakamura

Hideo Tanabe

Tong Zhao

Shinichiro Saito

Yukio Honda

Sadayasu Ueno

Masahiro Ojima

Kazuetsu Yoshida

Masahiro Kitada

Ryo Nagai

Noboru Shimizu

Hikaru Mizutani

Toshio Niihara

Koichi Nishioka

Akira Miyake

Kazunari Nakagawa

Keiichi Nagasaka

Yutaka Shimada

Katsuya Mitsuoka

Juichi Morikawa

Takashi Nishimura

Hideo Zama

Fumiyuki Inose

Tsutomu Iimura

Yoshito Tanaka

William Hill Butler

Kunio Mizushima

Toyoji Okuwaki

Yoshitane Tuburaya

Noboru Isoe

Isamu Orita

Takayuki Iseki

Hitoshi Iwata

Satoshi Taniguchi

Takeshi Ohnuki

Hideaki Niimi

Gary Mankey

Kazushige Imagawa

Tsutomu Kobayashi

Teizou Tamura

Nobuhiko Naganawa

Kiyotaka Ojima

Youichi Ogawa

Sheng-Yuan Wang

Shin-ichiro Iuchi

Shinichiro Iuchi

Akihiko Hosono

Julian Velev

Amrit Bandyopadhyay

Kenji Kato

Hisashi Thuruoka

Akira Usui

A toggle-MRAM device is disclosed that uses an SAF composite and lowers the operating field substantially with a wide operating field margin and high thermal stability using specific magnetic parameters. Consequently, this device enhances the performance of MRAM's, especially in its large operating field margin and high thermal stability characteristics with a low current.

Enhanced toggle-MRAM memory device

A CPP spin-valve element formed on a substrate including a free layer structure including at least one ferromagnetic layer and a pinned layer structure including at least one ferromagnetic layer. The free layer is magnetically softer than the pinned layer. A thin non-magnetic spacer layer structure configured to separate the free layer and the pinned layer is provided in order to prevent a magnetic coupling between the free and pinned layer structures, and to allow an electric current to go there through. At least two current-confining (CC) layer structures including at least two parts having significantly different current conductivities are incorporated therein.

CPP spin-valve element

A spin-valve device of a CPP structure which has a high resistance, and which generates a high output signal with low current. The CPP spin-valve device including a spin-valve element having a substrate and a layered structure formed on the substrate. The layered structure includes a first thin film layer of ferromagnetic material, a second thin film layer of ferromagnetic material, and a thin non-magnetic layer structure separating the first and second layers. One of the first and second thin film layers is defined as a free layer and the other layer is defined as a pinned layer, where the free layer has a direction of magnetization that is easier to change than a direction of magnetization of the pinned layer by application of a magnetic field. The non-magnetic layer structure includes a conducting part and insulating part, with the conduction part having an area that is smaller than an area of the free layer. The device further includes a device for producing a current flow through the spin-valve element and a field sensor configured to sense variations in resistance of the spin-valve element due to a difference in rotation of the magnetizations in the free layer and the pinned layer caused by an applied magnetic field.

CPP spin-valve device

A magneto-optical recording medium having a thin film, with suitable thermal conductivity, laminated on a magneto-optical film having excellent durability to repeated recording, reproducing and erasing comprising one layer or a multi-layer of thin film containing at least a magneto-optical recording film and carried on a transparent substrate, a ferromagnetic reflection film having a reflectance to a reproduction beam of 70% or higher and a thermal conductivity at a normal temperature from 0.05 to 2.0 W/cm.deg laminated on the backside of the magneto-optical recording film viewed from the transparent substrate side and, optionally, a heat control layer having a thermal conductivity at a normal temperature of 0.1 to 2.0 W/cm.deg laminated on the backside of the magneto-optical film.

Magneto-optical recording medium

Disclosed is a magneto-optical recording medium which comprises a transparent substrate and, provided on the substrate, a magneto-optical recording film comprising a perpendicular magnetic film based on rare earth metal-transition metal and an auxiliary magnetic film having spontaneous magnetization which exerts, between itself and the magneto-optical recording film, an exchange coupling force on each other and in which the auxiliary magnetic film used is a magnetic film which readily rotates its magnetization direction toward the external magnetic field in the neighborhood of the Curie temperature of the magneto-optical recording film and has a squareness ratio of not more than 1 in the neighborhood of the Curie temperature, and a process for producing the magneto-optical recording medium.

Magneto-optical recording medium and process for producing the same

A spin-valve read head of the giant magnetoresistive type in a data storage system has at least one magnetic thin film layer comprising a plurality of magnetic thinner film layers of ferromagnetic material with the same crystal plane orientation from one magnetic thinner film to another, and an interface between adjacent magnetic thinner films having a discontinuity in single-crystal epitaxial growth. Each magnetic thinner film layer is composed of an alloy including each of Fe, Ni and Co and has a weight ratio of Co:Fe equal to 90:10. The crystal has a crystal structure that is face centered cubic and a crystal plane orientation (111) that is highly ordered. The interfaces may be layers of Ni or Cu. The layers all exhibit a condition of magnetic orientation and annealed structure resulting from being annealed and cooled in a magnetic field sufficiently to have an anisotropic energy of the first magnetic thin film layer in an equilibrium state that is smaller than an identical structure before annealing.

Giant magnetoresistive effect sensor, particularly having a multilayered

A magnetic lamination including at least a first magnetic film, a second magnetic film and, a third magnetic film, a first intervening intermediate film intervening between the first and second magnetic films, and a second intervening intermediate film intervening between the second and third magnetic films, wherein the respective magnetic films each comprise a magnetically soft film, the first and second intervening films differ in thickness, and one of the first and second intervening films can have a zero thickness and further, the intervening intermediate film can include a transition metal and a substance which is likely to form a heterogeneous mixture with the transition metal.

Magnetic heads and magnetic recording reproducing devices using magnetic

A magneto-optical recording medium having a thin film with a suitable thermal conductivity, laminated on magneto-optical film, having excellent durability to repeated recording, reproducing and erasing comprising one layer or a multi-layer of thin film containing at least a magneto-optical recording film carried on a transparent substrate, a ferromagnetic reflection film having a reflectance to a reproduction beam of 70% or higher and a thermal conductivity at a normal temperature from 0.05 to 2.0 W/cm.deg laminated on the backside of the magneto-optical recording film viewed from the transparent substrate side and, optionally, a heat control layer having a thermal conductivity at a normal temperature of 0.1 to 2.0 W/cm.deg may be laminated on the backside of the magneto-optical film.

Disclosed is a magneto-optical recording medium which comprises a transparent substrate and, provided on the substrate, a magneto-optical recording film comprising a perpendicular magnetic film based on rare earth metal-transition metal and an auxiliary magnetic film having spontaneous magnetization which exerts, between itself and the magneto-optical recording film, an exchange coupling force and wherein the auxiliary magnetic film is a magnetic film which readily rotates its magnetization direction toward the external magnetic field in the neighborhood of the Curie temperature of the magneto-optical recording film and has a squareness ratio of not more than 1 in the neighborhood of the Curie temperature. Also disclosed is a process for producing the magneto-optical recording medium.

There is disclosed a magnetic recording medium comprising a non-magnetic substrate, a soft magnetic layer formed on the substrate, with or without a non-magnetic sublayer interposed therebetween, and a perpendicular magneto-anisotropic recording layer laminated on the soft magnetic layer, with or without a non-magnetic intermediate layer therebetween, the soft magnetic layer being composed of material saturation magnetization thereof being higher than at least that of the recording layer, and whose thickness is in the range of from 50 to 1,000 .ANG..

Magnetic recording medium

A magnetic recording medium comprising alumite made by anodic oxidation of aluminum or an aluminum alloy and comprising fine pores in which a ferromagnetic material is filled, wherein an in-plane remanence is at least 2.5 times greater than a perpendicular remanence and a magnetic recording medium of the above alumite, wherein the magnetic material is at least one material selected from the group consisting of Fe or Co, alloy mainly composed of Fe or Co, an Co or Fe containing a P element, and an alloy mainly composed of Co or Fe and containing the P element.

Provided according to the present invention are a perpendicular magnetic recording medium filled with a magnetic metal containing Fe as a main component in the fine pores of an alumite formed by anodic oxidation of a surface of an Al or Al alloy substrate, the particles of Fe in the filled magnetic metal being crystallographically discontinuous, and a process for the production thereof.

Magnetic recording medium comprising an aluminum substrate in which

Disclosed is a soft magnetic film comprising a thin film of magnetic material of cubic symmetry, characterized in that crystal face (111) of the thin film is oriented substantially parallel to the surface of the thin film.

Thin soft magnetic film and method of manufacturing the same

A magnetic recording medium comprising a non-magnetic substrate and a magnetic layer composed of a ferromagnetic material having a face-centered cubic structure and at least one of a carbon, silicon, a hydrocarbon compound and an organosilicone compound, provided on the non-magnetic substrate, has a high coercive force, a good head running property and a high durability.

A perpendicular magnetic recording medium comprising a non-magnetic substrate and a magnetic layer which is formed on at least one surface of the substrate and comprises acicular particles of ferromagnetic metal oriented perpendicularly to a plane of the layer and an organic polymer filled in spaces between the acicular particles so as to surround the acicular particules, wherein a volume content of the organic polymer is about 5 to 55% by volume of the whole volume of the magnetic layer, which medium has not only good recording and reproducing characteristics but also improved durability.

Perpendicular magnetic recording medium and method for producing the same

Growing community of inventors

Ibaraki, Japan

Hideo Fujiwara