Hidenori Nishihara

Title: Hidenori Nishihara: Innovator in Semiconductor Technology

Introduction

Hidenori Nishihara is a prominent inventor based in Fukuoka, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on improving the efficiency and functionality of insulated gate semiconductor devices.

Latest Patents

One of his latest patents is for an insulated gate semiconductor device and its manufacturing method. This innovative device reduces the ON voltage by incorporating strip-like trenches with buried gate electrodes in the upper main surface of a semiconductor base body. The design features a ladder-like N-emitter layer that is exposed in the upper main surface, interposed between adjacent trenches. This configuration ensures that even if the position of a zonal region, which serves as a contact surface with an emitter electrode, is shifted, the emitter electrode remains in contact with the N-emitter layer. The adjacent ladder-like N-emitter layer facilitates the formation of a continuous channel region along the trench, which aids in miniaturizing elements and effectively utilizing this miniaturization to decrease the ON voltage.

Career Highlights

Hidenori Nishihara is currently employed at Mitsubishi Electric Corporation, where he continues to advance semiconductor technology. His innovative approaches have garnered attention in the industry, contributing to the development of more efficient electronic devices.

Collaborations

He has collaborated with notable coworkers, including Hideki Takahashi and Masana Harada, to further enhance the research and development of semiconductor technologies.

Conclusion

Hidenori Nishihara's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work not only advances technology but also paves the way for future innovations in electronics.