The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2001
Filed:
May. 02, 2000
Hideki Takahashi, Fukuoka, JP;
Hidenori Nishihara, Fukuoka, JP;
Masana Harada, Nishinomiya, JP;
Tadaharu Minato, Kobe, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
An insulated gate semiconductor device in which the ON voltage is decreased by providing strip like trenches (,) having gate electrodes (,) buried therein are formed in an upper main surface of a semiconductor base body (,), and an N,emitter layer (,) is exposed in a ladder-like form in the upper main surface of the semiconductor base body interposed between adjacent trenches (,). Accordingly, even if the position of a zonal region (Ra) which is a contact surface with an emitter electrode (,) is shifted, the emitter electrode (,) is surely in contact with the N,emitter layer (,). Furthermore, the ladder-like N,emitter layer (,) is formed adjacent to the trench (,), so that a channel region (,) is formed without discontinuation along the trench (,). Accordingly, it has the effect of facilitating miniaturization of elements and of effectively making use of the miniaturization to decrease the ON voltage.