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Title: Hidenori Nakayama: Innovator in Solar Cell Technology
Introduction
Hidenori Nakayama is a prominent inventor based in Goleta, California. He has made significant contributions to the field of solar cell technology, holding a total of 3 patents. His work focuses on enhancing the efficiency of organic semiconductors, which are crucial for the development of advanced solar cells.
Latest Patents
One of Nakayama's latest patents involves the use of N-type dopants for efficient solar cells. He discovered that Triazabicylodecene can effectively n-dope a variety of organic semiconductors, including PCBM, thereby increasing in-plane conductivities. Nakayama synthesized a series of TBD-based n-dopants through an N-alkylation reaction and studied the impact of various alkyl chains on the physical and device properties of these dopants. By combining two TBD moieties on a long alkyl chain, he developed a solid dopant, 2TBD-C10, which exhibits high thermal stability above 250° C. PCBM films doped with 2TBD-C10 demonstrated remarkable tolerance to thermal annealing, achieving in-plane conductivities of 6.5×10 S/cm. Furthermore, incorporating 2TBD-C10 doped PCBM as the electron transport layer (ETL) in methylammonium lead triiodide (MAPbI) based photovoltaics resulted in a 23% increase in performance, elevating the power conversion efficiency from 11.8% to 14.5%.
Career Highlights
Throughout his career, Nakayama has worked with esteemed organizations such as the University of California and Mitsubishi Chemical Corporation. His innovative research has positioned him as a key figure in the advancement of solar technology.
Collaborations
Some of his notable collaborators include Hengbin Wang and Michael L Chabinyc. Their combined expertise has contributed to the success of Nakayama's research endeavors.
Conclusion
Hidenori Nakayama's work in solar cell technology exemplifies the impact of innovative research on renewable energy solutions. His contributions continue to pave the way for advancements in the efficiency of organic semiconductors.