The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2022
Filed:
Dec. 12, 2019
The Regents of the University of California, Oakland, CA (US);
Julia Schneider, New Haven, CT (US);
Michael L. Chabinyc, Santa Barbara, CA (US);
Hengbin Wang, Santa Barbara, CA (US);
Hidenori Nakayama, Goleta, CA (US);
Kyle D. Clark, Santa Barbara, CA (US);
Javier Read de Alaniz, Santa Barbara, CA (US);
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);
THE MITSUBISHI CHEMICAL CORPORATION, Tokyo, JP;
Abstract
Triazabicylodecene can effectively n-dope a variety of organic semiconductors, including PCBM, thus increasing in-plane conductivities. We synthesized a series of TBD-based n-dopants via an N-alkylation reaction and studied the effect of various alkyl chains on the physical and device properties of the dopants. Combining two TBD moieties on a long alky chain gave a solid dopant, 2TBD-C10, with high thermal stability above 250° C. PCBM films doped by 2TBD-C10 were the most tolerant to thermal annealing and reached in-plane conductivities of 6.5×10S/cm. Furthermore, incorporating 2TBD-C10 doped PCBM as the electron transport layer (ETL) in methylammonium lead triiodide (MAPbI) based photovoltaics led to a 23% increase in performance, from 11.8% to 14.5% PCE.