Yokohama, Japan

Hideki Takada

This inventor holds 3 USPTO granted patents. Top assignees: Kabushiki Kaisha Toshiba, Other. Active years: 1993-2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hideki Takada. Retrieved from https://idiyas.com/inventor/hideki-takada-yo7gy1vq

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.4

ph-index = 2

Forward Citations = 28(Granted Patents)


Company Filing History:


Years Active: 1993-2003

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3 patents (USPTO):Explore Patents

Title: Innovations of Hideki Takada

Introduction

Hideki Takada is a notable inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on improving semiconductor device manufacturing methods and enhancing the performance of integrated circuits.

Latest Patents

One of Takada's latest patents is a semiconductor device manufacturing method designed to reduce process-induced stress and crystalline defects. This method involves annealing a semiconductor substrate in an N ambient pressure with an O partial pressure of less than about 10 at a temperature between about 950 °C and about 1055 °C. Additionally, he has developed a method to reduce crystalline defects in semiconductor manufacturing by depositing a metal on an insulator to form metal silicide. This method includes etching the insulator to create an overhang, which results in a void between the semiconductor substrate and the insulator. The metal is then deposited on both the insulator and the semiconductor substrate, followed by heating to form metal silicide on the substrate's surface.

Another significant patent by Takada involves a semiconductor integrated circuit device that features at least two bipolar transistors with a first type structure, where a wiring layer is in direct contact with the emitter region. This design is intended for circuits requiring a high matching degree. In contrast, at least one bipolar transistor with a second type structure, featuring a polysilicon layer on the emitter region, is used in circuits that prioritize high performance, low power consumption, and high integration density.

Career Highlights

Throughout his career, Hideki Takada has worked with prominent companies, including Kabushiki Kaisha Toshiba. His experience in the semiconductor industry has allowed him to develop innovative solutions that address critical challenges in device manufacturing.

Collaborations

Takada has collaborated with notable individuals in the field, including Hiroomi Nakajima and Nobuyuki Itoh. These collaborations have contributed to the advancement of semiconductor technologies and innovations.

Conclusion

Hideki Takada's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the industry. His innovative methods continue to influence the development of high-performance semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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