Tokyo, Japan

Hideki Hayashida

This inventor holds 4 USPTO granted patents. Top assignees: Showa Denko K.k., Showa Denko Kabushiki Kaisha. Active years: 2000-2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hideki Hayashida. Retrieved from https://idiyas.com/inventor/hideki-hayashida

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.4

ph-index = 2

Forward Citations = 10(Granted Patents)


Location History:

  • Tokyo, JP (2000 - 2006)
  • Kanagawa, JP (2006)

Company Filing History:


Years Active: 2000-2006

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4 patents (USPTO):Explore Patents

Title: Innovations of Inventor Hideki Hayashida

Introduction

Hideki Hayashida is a notable inventor based in Tokyo, Japan. He has made significant contributions to the field of measurement technologies and semiconductor manufacturing. With a total of 4 patents to his name, his work has had a considerable impact on various industrial applications.

Latest Patents

One of Hayashida's latest patents is a method for measuring water concentration in ammonia. This innovative method and apparatus utilize ammonia with a water concentration of 10 ppm or less as a reference gas. The process involves introducing ammonia at a constant flow rate into a multi-reflection long optical path gas cell. It measures the infrared absorption intensity of water at specific measurement wave numbers where the infrared absorptions of ammonia and water do not overlap. This invention allows for the analysis of water in a low concentration range of 10 ppm or less in ammonia gas and liquefied ammonia in a simple and convenient manner.

Another significant patent by Hayashida pertains to ammonia used in the manufacture of GaN-type compound semiconductors. This invention describes a method where ammonia is filled in a charging container such that at least part of it is liquid. The liquid phase ammonia has a water concentration determined by Fourier-transform infrared spectroscopy (FT-IR) of 0.5 vol ppm or less. This ammonia is then introduced in the gaseous state into a reaction chamber, where a layer comprising a GaN-type compound is formed on a substrate.

Career Highlights

Hayashida has worked with prominent companies, including Showa Denko Kabushiki Kaisha and Showa Denko K.K. His experience in these organizations has contributed to his expertise in the field of semiconductor technology and measurement systems.

Collaborations

Throughout his career, Hayashida has collaborated with notable colleagues such as Yasuyuki Sakaguchi and Taizo Ito. These collaborations have likely enriched his research and development efforts, leading to innovative solutions in his field.

Conclusion

Hideki Hayashida's contributions to measurement technologies and semiconductor manufacturing demonstrate his innovative spirit and technical expertise. His patents reflect a commitment to advancing technology in practical and impactful ways.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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