The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2006
Filed:
Apr. 12, 2004
Applicants:
Hideki Hayashida, Tokyo, JP;
Taizo Ito, Kanagawa, JP;
Yasuyuki Sakaguchi, Saitama, JP;
Inventors:
Assignee:
Showa Denko Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Ammonia for use in the manufacture of a GaN-type compound semiconductor, filled in a charging containersuch that at least a part of the ammonia is liquid and the liquid phase ammonia has a water concentration determined by a Fourier-transform infrared spectroscopy (FT-IR) of 0.5 vol ppm or less, is introduced in the gaseous state into a reaction chamberhousing therein a substrateand a layer comprising a GaN-type compound started from this ammonia is formed on the substrate