Hidehiro Fujiwara

This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hidehiro Fujiwara. Retrieved from https://idiyas.com/inventor/hidehiro-fujiwara-0filzgr1

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Hidehiro Fujiwara and Memory-Circuit Innovation.

Introduction

Hidehiro Fujiwara is an inventor associated with Taiwan Semiconductor Manufacturing Company Limited. His listed patent concerns memory-circuit design and the operation of a multiply-accumulate circuit.

Latest Patents

Fujiwara is credited with 1 patent: “Memory Circuit with Multiply-Accumulate (MAC) Circuit and Method of Operating the Same.” The invention combines memory circuitry with a multiply-accumulate circuit and describes a method for operating the system.

Career Highlights

The available information identifies Fujiwara’s work with Taiwan Semiconductor Manufacturing Company Limited and records his contribution to memory and computational circuit technology.

Collaborations

Fujiwara’s listed coworkers include Je-Ming Hung and Haruki Mori.

Conclusion

Hidehiro Fujiwara’s recorded patent reflects work on integrating memory and multiply-accumulate functionality, in collaboration with colleagues at Taiwan Semiconductor Manufacturing Company Limited.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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