Fuji, Japan

Hidehiko Kobayashi


Average Co-Inventor Count = 4.3

ph-index = 7

Forward Citations = 193(Granted Patents)


Location History:

  • Fuji, JA (1976 - 1977)
  • Fuji, JP (1978 - 1982)

Company Filing History:


Years Active: 1976-1982

Loading Chart...
18 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Hidehiko Kobayashi

Introduction

Hidehiko Kobayashi is a prominent inventor based in Fuji, Japan. He has made significant contributions to the field of semiconductor technology and image forming materials. With a total of 18 patents to his name, Kobayashi's work has had a substantial impact on various technological advancements.

Latest Patents

One of Kobayashi's latest patents is a novel semiconductor device that features an oxide semiconductor layer positioned between an amorphous silicon hydride and a metallic layer. This innovative design has demonstrated excellent collection efficiency for light, particularly in the short wavelength range, and exhibits a high energy conversion efficiency compared to conventional Schottky barrier semiconductor devices and those with a MIS structure. Additionally, this semiconductor device has shown remarkable storage stability over extended periods. Another notable patent involves heat developable silver image forming materials, which further showcases his expertise in material science.

Career Highlights

Kobayashi has built a distinguished career at Asahi Kasei Kogyo Kabushiki Kaisha, where he has been instrumental in advancing semiconductor technologies. His work has not only contributed to the company's reputation but has also pushed the boundaries of innovation in the industry.

Collaborations

Throughout his career, Kobayashi has collaborated with talented individuals such as Tatsumi Arakawa and Takeo Kimura. These partnerships have fostered a creative

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…