The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 1982
Filed:
Jan. 17, 1980
Applicant:
Inventors:
Kaoru Takasuka, Fuji, JP;
Tatsumi Arakawa, Fuji, JP;
Fumio Matushita, Fuji, JP;
Hidehiko Kobayashi, Fuji, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357-2 ; 357 15 ; 357 30 ; 357 23 ;
Abstract
A novel semiconductor device having an oxide semiconductor layer between an amorphous silicon hydride and a metallic layer has been found to have an excellent collection efficiency for light, particularly, in the range of short wavelengths and a high energy conversion efficiency as compared with the conventional Schottky barrier semiconductor device and the semiconductor device having a MIS structure. Further, it has been found that the present novel semiconductor device has an excellent storage stability for a long period of time.