Akishima, Japan

Hideaki Ohnishi

This inventor holds 1 USPTO granted patent. Top assignee: Other. Active years: 2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hideaki Ohnishi. Retrieved from https://idiyas.com/inventor/hideaki-ohnishi-ng4rs39k

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 17(Granted Patents)


Company Filing History:

goldMedal1 out of 834,601 
Other
 patents

Years Active: 2001

Loading Chart...
1 patent (USPTO):Explore Patents

Title: The Innovations of Hideaki Ohnishi

Introduction

Hideaki Ohnishi is a notable inventor based in Akishima, Japan. He has made significant contributions to the field of microscopy, particularly with his innovative designs that enhance observation techniques.

Latest Patents

Ohnishi holds a patent for a microscopic system equipped with both an electron microscope and a scanning probe microscope. This invention allows for simultaneous observation under ultra-high vacuum conditions. The system features an electron microscope chamber that includes an observation stage, an ultra-high vacuum chamber for the scanning probe microscope, and a specimen treatment chamber. Each chamber can be separately exhausted to ultra-high vacuum levels, allowing for flexible specimen handling and observation.

Career Highlights

Throughout his career, Ohnishi has focused on advancing microscopic technologies. His work has been instrumental in improving the capabilities of electron and scanning probe microscopy, which are essential tools in various scientific research fields.

Collaborations

Ohnishi has collaborated with Kunio Takayanagi, contributing to the development of advanced microscopic systems.

Conclusion

Hideaki Ohnishi's innovative work in microscopy has paved the way for enhanced observation techniques in scientific research. His contributions continue to influence the field and inspire future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…