Saitama, Japan

Hideaki Matsumoto

This inventor holds 1 USPTO granted patent. Top assignee: New Japan Radio Co., Ltd.. Active years: 2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hideaki Matsumoto. Retrieved from https://idiyas.com/inventor/hideaki-matsumoto-00efn9ag

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: The Innovations of Hideaki Matsumoto

Introduction: Hideaki Matsumoto is a notable inventor based in Saitama, Japan. He has made significant contributions to the field of semiconductor technology. His work focuses on enhancing the performance and reliability of semiconductor devices.

Latest Patents: Matsumoto holds a patent for a semiconductor device that includes an ESD protection element. This innovative design suppresses size increases, eliminates the need for extra processes, and prevents the deterioration of the semiconductor device's characteristics. The device comprises a semiconductor substrate, a circuit element with a PN junction, and a protection element in the form of a transistor.

Career Highlights: Matsumoto is currently employed at New Japan Radio Co., Ltd. His expertise in semiconductor technology has positioned him as a key player in the industry. His patent reflects his commitment to advancing semiconductor device functionality.

Collaborations: Matsumoto has worked alongside talented colleagues, including Jun Yamashita and Kenji Esashika. Their collaborative efforts contribute to the innovative environment at New Japan Radio Co., Ltd.

Conclusion: Hideaki Matsumoto's contributions to semiconductor technology exemplify his dedication to innovation. His patent showcases his ability to solve complex challenges in the field. His work continues to influence the development of advanced semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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