The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2015

Filed:

Feb. 28, 2012
Applicants:

Hideaki Matsumoto, Saitama, JP;

Jun Yamashita, Saitama, JP;

Kenji Esashika, Saitama, JP;

Takao Sugino, Saitama, JP;

Inventors:

Hideaki Matsumoto, Saitama, JP;

Jun Yamashita, Saitama, JP;

Kenji Esashika, Saitama, JP;

Takao Sugino, Saitama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0248 (2013.01); H01L 27/0262 (2013.01); H01L 27/0623 (2013.01);
Abstract

A semiconductor device that is equipped with an ESD protection element, which has a size increase thereof suppressed, does not require extra process, and can be formed without inducing deterioration of characteristics of the semiconductor device. This semiconductor device includes a semiconductor substrate, a circuit element, that includes a PN junction formed of a region, which is formed on the semiconductor substrate, and which has a conductivity type different from that of the substrate and a protection element for the circuit element. The protection element is a transistor formed of the region, another region having the conductivity type same as that of the region, and the semiconductor substrate. The emitter for the transistor and the semiconductor substrate are connected to each other.


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