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For the Inventor, By the Inventor

Yongin, South Korea

Heung-Soo Lim

This inventor holds 13 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2006-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Heung-Soo Lim. Retrieved from https://idiyas.com/inventor/heung-soo-lim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 13

% Patents Active = 53.8

Average Co-Inventor Count = 2.2

ph-index = 4

Forward Citations = 51(Granted Patents)


Location History:

  • Yongin-shi, KR (2006)
  • Kyungi-do, KR (2006)
  • Yongin-si, KR (2007 - 2016)

Company Filing History:

goldMedal13 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2006-2016

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13 patents (USPTO):Explore Patents
1. 9478298 - Memory system and method of reading data thereof (2016-10-25),
2. 7742341 - Semiconductor memory device and related programming method (2010-06-22),
3. 7668015 - Nonvolatile memory devices capable of reducing data programming time and methods of driving the same (2010-02-23),
4. 7599222 - Semiconductor memory device using pipelined-buffer programming and related method (2009-10-06),
5. 7539077 - Flash memory device having a data buffer and programming method of the same (2009-05-26),
6. 7457165 - Non-volatile memory device and method of programming same (2008-11-25),
7. 7433244 - Flash memory device and related erase operation (2008-10-07),
8. 7426143 - Semiconductor memory device and related programming method (2008-09-16),
9. 7405977 - Flash memory device with improved read speed (2008-07-29),
10. 7286413 - Non-volatile memory device and method of programming same (2007-10-23),
11. 7180790 - Non-volatile memory device having controlled bulk voltage and method of programming same (2007-02-20),
12. 7123528 - Flash memory device having column predecoder capable of selecting all column selection transistors and stress test method thereof (2006-10-17),
13. 7099211 - Flash memory device capable of reducing test time and test method thereof (2006-08-29),

Title: Heung-Soo Lim: Semiconductor Memory Inventor

Introduction

Heung-Soo Lim is an inventor based in Yongin, South Korea. His work focuses on semiconductor memory technologies, including methods for reading data from non-volatile memory and programming NOR flash devices. He is associated with Samsung Electronics Co., Ltd. and is credited with 13 patents.

Latest Patents

“Memory System and Method of Reading Data Thereof” describes a method for handling errors in a non-volatile memory system. The method first reads data from a block using an error-detection and correction scheme. If an error remains uncorrected, the block is designated a temporary bad block, and the system reads its data using a different scheme.

“Semiconductor Memory Device and Related Programming Method” concerns NOR flash memory programming. During program verification, the method controls whether current flows from a sense amplifier to a memory cell according to the programmed data value. Current is supplied when verification is indicated and cut off when it is not.

Career Highlights

Lim’s listed inventions address memory reliability and programming control. His work on error recovery describes an alternative reading approach for data in a block with an uncorrected error, while his NOR flash patent focuses on managing current during program verification.

Collaborations

Lim’s listed coworkers include Jae-Yong Jeong and Chi-Weon Yoon. His work is associated with Samsung Electronics Co., Ltd.

Conclusion

Heung-Soo Lim’s patent portfolio reflects contributions to semiconductor memory systems, particularly data recovery and NOR flash programming methods.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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