This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Heung Sik Park: Semiconductor Device Fabrication Inventor
Introduction
Heung Sik Park is an inventor based in Suwon, South Korea. His patent work concerns semiconductor device fabrication, and the supplied information lists Samsung Electronics Ltd. as his company.
Latest Patents
Park is credited with 1 patent: “Method for Fabricating Semiconductor Device.” The method describes forming a mask layer on a substrate, with a through hole exposing the substrate’s upper surface. The mask layer includes a carbon-containing second layer positioned between the substrate and a first mask layer. The method also forms a liner layer along the through-hole sidewalls within the second mask layer.
Career Highlights
Park’s listed invention addresses a process for fabricating semiconductor devices, focusing on the structure of the mask layers and the formation of a liner within the through hole. The available information identifies Samsung Electronics Ltd. as his company.
Collaborations
The supplied information names John Soo Kim and Gwan Ho Kim as Park’s coworkers. Their inclusion indicates professional connections, but no specific joint patent or collaboration details were provided.
Conclusion
Heung Sik Park’s listed patent documents a semiconductor fabrication method involving a carbon-containing mask layer and a liner formed inside a through hole.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile