Herve Guerner

Title: The Innovative Contributions of Herve Guerner

Introduction

Herve Guerner is a notable inventor based in Nantes, France. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to the manufacturing of DMOS (Double-Diffused Metal-Oxide-Semiconductor) devices. His work has implications for the efficiency and performance of electronic components.

Latest Patents

Herve Guerner holds a patent for a method of manufacturing a DMOS. This patent describes a process that involves using a polysilicon gate layer and a multiple dielectric mask to define a window for body implantation into a substrate. The method includes oxidizing unmasked regions of polysilicon and substrate to form oxide regions. After removing protective studs and a portion of the oxide, the remaining oxide regions serve as a mask for source implantation. This innovative approach enhances the manufacturing process of DMOS devices.

Career Highlights

Guerner is associated with Thomson Semiconducteurs, a company known for its advancements in semiconductor technology. His work at the company has allowed him to contribute to the development of cutting-edge electronic components. With a focus on innovation, he has been instrumental in pushing the boundaries of what is possible in semiconductor manufacturing.

Collaborations

Herve Guerner collaborates with Gwenael Rouault, a fellow innovator in the field. Their partnership exemplifies the importance of teamwork in driving technological advancements and fostering innovation.

Conclusion

Herve Guerner's contributions to the field of semiconductor technology through his patent for a method of manufacturing DMOS devices highlight his role as an influential inventor. His work continues to impact the industry, paving the way for future innovations in electronic components.