The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 1989
Filed:
Oct. 23, 1987
Applicant:
Inventors:
Gwenael Rouault, Tours, FR;
Herve Guerner, Nantes, FR;
Assignee:
Thomson Semiconducteurs, Paris, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 41 ; 437 38 ; 437968 ; 437985 ; 437978 ; 437153 ; 148D / ;
Abstract
A method of manufacturing a DMOS is disclosed. On a polysilicon gate layer, a multiple dielectric mask including studs (71) defines a window (70) for body implantation (80) into a substrate. Unmasked regions of polysilicon and substrate are oxidized to form oxide regions (84,85,88). Subsequent to the removal of the protective studs and a portion of the oxide, remaining oxide regions (90,91,92) act as a mask for source implantation (99,100).