Gwenael Rouault

Title: **Inventor Spotlight: Gwenael Rouault**

Introduction

Gwenael Rouault is a notable inventor based in Tours, France, recognized for his contributions to the field of semiconductor technology. With a strong focus on innovations in manufacturing methods, Rouault has secured a patent that significantly advances the production of DMOS (Double-diffused Metal-Oxide-Semiconductor) devices.

Latest Patents

Rouault holds a single patent titled “Method of manufacturing a DMOS.” This inventive method involves the use of a polysilicon gate layer with a multiple dielectric mask that includes studs, which define a window for body implantation into a substrate. The technique further details the oxidation process of unmasked regions of polysilicon and substrate to create oxide regions, followed by the careful removal of protective studs and portions of oxide, resulting in remaining oxide regions that facilitate source implantation.

Career Highlights

Currently, Gwenael Rouault is employed at Thomson Semiconducteurs, a company renowned for its work in semiconductor technology and electronic components. His career is marked by innovation and a strong dedication to enhancing manufacturing processes in this competitive industry.

Collaborations

During his professional journey, Rouault has collaborated with skilled colleagues, including Herve Guerner, contributing to the collaborative culture at Thomson Semiconducteurs. Their partnership emphasizes the importance of teamwork in driving technological advancements and innovation in their field.

Conclusion

Gwenael Rouault’s innovative approach to manufacturing DMOS devices represents a significant step forward in semiconductor technology. His patent not only showcases his expertise but also highlights the potential for further advancements in the industry. As he continues his work with Thomson Semiconducteurs, the contributions of inventors like Rouault will undoubtedly influence the future of technology.