Nussbaumen, Switzerland

Herve De Lambilly

This inventor holds 1 USPTO granted patent. Top assignee: Asea Brown Boveri Inc.. Active years: 1993.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Herve De Lambilly. Retrieved from https://idiyas.com/inventor/herve-de-lambilly-h5a1vuiw

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 1993

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1 patent (USPTO):Explore Patents

Title: Herve De Lambilly: Innovator in Power Semiconductor Circuits

Introduction

Herve De Lambilly is a notable inventor based in Nussbaumen, Switzerland. He has made significant contributions to the field of power semiconductor technology. His innovative work has led to the development of a unique power semiconductor circuit that enhances the efficiency and performance of electronic systems.

Latest Patents

Herve De Lambilly holds 1 patent for his invention of a power semiconductor circuit. This circuit comprises a gate-turn-off semiconductor component, a diode, and a drive circuit. The design features a large-area, low-inductance stripline that connects the drive circuit to the gate, generating a current pulse for turning off the semiconductor component. The arrangement of the diode and semiconductor component forms a quarter-bridge arm, while a low-inductance blocking capacitor is included to absorb reverse recovery voltage peaks.

Career Highlights

Herve De Lambilly is associated with Asea Brown Boveri Inc., a company known for its advancements in electrical engineering and automation technologies. His work at the company has been instrumental in pushing the boundaries of power semiconductor applications.

Collaborations

Throughout his career, De Lambilly has collaborated with esteemed colleagues such as Horst Gruning and Ferdinand Steinruck. These partnerships have fostered innovation and contributed to the development of cutting-edge technologies in the semiconductor field.

Conclusion

Herve De Lambilly's contributions to power semiconductor circuits exemplify his commitment to innovation in technology. His patent reflects a significant advancement in the efficiency of electronic systems.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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