The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 1993
Filed:
May. 28, 1991
Asea Brown Boveri Ltd., Baden, CH;
Abstract
A power semiconductor circuit comprises a gate-turn-off semiconductor component (FCTh1, FCTh2) having an anode, a cathode and a gate, a diode (D1, D2) and a drive circuit which is connected to the gate by a large-area, low-inductance stripline (11) and which generates a current pulse for turning off the semiconductor component. The diode (D1, D2) is arranged in series with the semiconductor component (FCTh1, FCTh2), specifically in such a way that the diode (D1, D2) and semiconductor component (FCTh1, FCTh2) form a quarter-bridge arm. Provided in parallel with the series circuit of the semiconductor component (FCTh1, FCTh2) and diode (D1, D2) is a low-inductance blocking capacitor (C1, C2) for absorbing the reverse recovery voltage peaks of the diode (D1, D2). The diode (D1, D2) and blocking capacitor (C1, C2) are arranged with low inductance and spatially immediately adjacent to the semiconductor component.