Heonwook Kim

Title: Heonwook Kim: Innovator in NAND Memory Technology

Introduction

Heonwook Kim is a notable inventor based in Santa Clara, California. He has made significant contributions to the field of NAND memory technology, showcasing his expertise through his innovative patent.

Latest Patents

Heonwook Kim holds a patent for a technology titled "Weak erase pulse." This invention provides systems, apparatuses, and methods that bias a word line of a block in NAND memory to a first voltage level. It also biases a source-side select gate and a drain-side select gate of the block to a second voltage level. The technology issues a discharge erase pulse to bitlines and a source of the block, where the discharge erase pulse is issued at a third voltage level. This third voltage level is greater than the first and second voltage levels, yet less than a fourth voltage level of a standard erase pulse. In one example, the discharge erase pulse injects holes into pillars of the block and bypasses an erase of cells in the pillars of the block.

Career Highlights

Heonwook Kim is currently employed at Intel Ndtm US LLC, where he continues to develop cutting-edge technologies in memory systems. His work has positioned him as a key player in the advancement of NAND memory solutions.

Collaborations

Heonwook has collaborated with talented coworkers, including Chao Zhang and Krishna Kumar Parat, contributing to a dynamic and innovative work environment.

Conclusion

Heonwook Kim's contributions to NAND memory technology through his patent demonstrate his innovative spirit and technical expertise. His work at Intel Ndtm US LLC continues to influence advancements in the field.