Company Filing History:
Years Active: 2019-2020
Title: The Innovations of Henry Kwong
Introduction
Henry Kwong is a notable inventor based in Hong Kong, CN. He has made significant contributions to the field of semiconductor technology. With a total of 2 patents to his name, his work has had a considerable impact on the industry.
Latest Patents
Henry Kwong's latest patents focus on a hybrid doping profile for semiconductor devices. The patents describe a semiconductor device that features a hybrid doping distribution and a method for fabricating it. The device includes a gate positioned over an active semiconducting region, with a first source/drain (S/D) region and a second S/D region aligned to opposing sides of the gate's side walls. The active semiconducting region has a doping profile that consists of a first doping region at a specific depth beneath the gate, characterized by a certain dopant concentration. Additionally, the doping profile includes a second doping region at a greater depth beneath the gate, which has a lower dopant concentration than the first.
Career Highlights
Henry Kwong is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices.
Collaborations
Henry has collaborated with esteemed colleagues such as Chih-Yung Lin and Po-Nien Chen, contributing to various projects within the semiconductor field.
Conclusion
Henry Kwong's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the industry. His innovative work continues to shape the future of semiconductor devices.