Taiwan Semiconductor Manufacturing Comp. Ltd.

Henry Kwong

Chih-Yung Lin

Po-Nien Chen

Chen Hua Tsai

A semiconductor device having a hybrid doping distribution and a method of fabricating the semiconductor device are presented. The semiconductor device includes a gate disposed over an active semiconducting region and a first S/D region and a second S/D region each aligned to opposing sides of the gate side walls. The active semiconducting region has a doping profile that includes a first doping region at a first depth beneath the gate and having a first dopant concentration. The doping profile includes a second doping region at a second depth beneath the gate greater than the first depth and having a second dopant concentration less than the first dopant concentration.

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Hong Kong, China

Henry Kwong