Company Filing History:
Years Active: 2016
Title: The Innovations of Henry Fagg
Introduction
Henry Fagg is an accomplished inventor based in Tucson, AZ. He has made significant contributions to the field of semiconductor technology. His innovative approach has led to the development of a unique edge electrode for the characterization of semiconductor wafers.
Latest Patents
Henry Fagg holds a patent for an edge electrode designed for the characterization of semiconductor wafers. This invention utilizes a conductive conformable braided wire as the edge electrode. The braided wire is specifically adapted to contact the perimeter of the n-GaN layer using a retractable support structure. This structure alternates between placing the electrode in contact with the edge of the n-GaN layer and retracting it during repeated cycles of operation. This method allows for testing a plurality of similar wafers. The braided wire provides a very stable and higher electrical contact compared to any prior-art edge electrode. He has been granted 1 patent for this innovative design.
Career Highlights
Henry Fagg is currently employed at Bruker Nano GmbH, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the methods used for material characterization in the semiconductor industry.
Collaborations
Henry has collaborated with notable colleagues, including Dong Chen Chen and Bryan W Guenther. Their combined expertise has contributed to the success of various projects within the company.
Conclusion
Henry Fagg's innovative contributions to semiconductor technology exemplify the impact of dedicated inventors in advancing industry standards. His work continues to influence the field and inspire future innovations.