Henricus M Vaes

Title: The Innovations of Henricus M Vaes

Introduction

Henricus M Vaes is a notable inventor based in Eindhoven, Netherlands. He has made significant contributions to the field of high-frequency transistors and MIS elements. With a total of 3 patents to his name, his work has had a considerable impact on semiconductor technology.

Latest Patents

One of his latest patents is a high-frequency transistor with low internal capacitance and low thermal characteristics. This invention features a substrate of a first conductivity type, an epitaxial collector layer of the same type, and a layer-shaped base region of the opposite conductivity type. The base region is subdivided by a sunken oxide pattern into several interconnected base zones, with conducting layers made of poly-crystalline silicon. Another significant patent is for a MIS high-voltage element with a high-resistivity gate and field-plate. This innovation utilizes high-ohmic polycrystalline silicon to form a depletion layer, allowing for electric decoupling between the gate and the underlying semiconductor body. This effect is beneficial in various circuit elements, including CCDs and MOS transistors.

Career Highlights

Henricus M Vaes is associated with U.S. Philips Corporation, where he has been instrumental in advancing semiconductor technologies. His work has contributed to the development of devices that enhance performance and reliability in electronic applications.

Collaborations

Throughout his career, Henricus has collaborated with notable colleagues such as Adrianus W Ludikhuize and Johannes A Appels. These collaborations have fostered innovation and have led to the successful development of various technologies.

Conclusion

Henricus M Vaes is a distinguished inventor whose work in high-frequency transistors and MIS elements has significantly influenced the semiconductor industry. His patents reflect a commitment to innovation and excellence in technology.