The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 1989
Filed:
Dec. 19, 1988
Henricus M Vaes, Eindhoven, NL;
U.S. Philips Corp., New York, NY (US);
Abstract
A high-frequency transistor having a substrate of a first conductivity type, an epitaxial collector layer of the first conductivity type, a layer-shaped base region of the second opposite conductivity type, which is provided in the collector layer and is subdivided by a sunken oxide pattern into a number of base zones which are interconnected by conducting layers located on the oxide pattern, and at least one emitter zone of the first conductivity type in each base zone. According to the invention, the conducting layers consist of poly-crystalline silicon of which an edge is covered with a thin oxide layer which extends into the base zone and laterally bounds the emitter zones.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile