The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 1983
Filed:
Dec. 22, 1980
Henricus M Vaes, Eindhoven, NL;
Johannes A Appels, Eindhoven, NL;
Adrianus W Ludikhuize, Eindhoven, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
A semiconductor device of the 'RESURF' type has a substrate region and a superimposed semiconductor layer which forms a p-n junction with the substrate region. The semiconductor layer has an island-shaped region which is depleted at least locally up to the surface at a reverse voltage applied across the p-n junction which is well below the breakdown voltage of the p-n junction. According to the invention the island-shaped part of the semiconductor layer over at least a part of its area has a doping profile in the vertical direction with at least two overlying layer portions with different average net doping concentrations and of the same or opposite conductivity type, so as to increase the current-carrying capacity of the semiconductor layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile