This inventor holds 1 USPTO granted patent. Top assignee: Thomson-Csf. Active years: 1978.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1978
Title: The Innovative Contributions of Henri Hougeot
Introduction
Henri Hougeot is a notable inventor based in Paris, France. He has made significant contributions to the field of semiconductor technology. His innovative methods have paved the way for advancements in electrolysis installations.
Latest Patents
Henri Hougeot holds a patent for a method of producing microscopic passages in a semiconductor body. This method involves drilling microscopic passages in a semiconductor body, which is incorporated into the anode of an electrolysis installation. The process allows for the migration of holes in an electric field, leading to the gradual boring of passages through the semiconductor.
Career Highlights
Henri Hougeot has worked with Thomson-CSF, a prominent company in the technology sector. His work has focused on enhancing semiconductor applications, particularly in electrolysis systems. His innovative approach has contributed to the efficiency and effectiveness of these systems.
Collaborations
Henri has collaborated with notable coworkers, including Christian Baud and Yvan Raverdy. Their combined expertise has further advanced the research and development of semiconductor technologies.
Conclusion
Henri Hougeot's contributions to semiconductor technology through his innovative patent demonstrate his significant role in the field. His work continues to influence advancements in electrolysis installations and semiconductor applications.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile