The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 1978
Filed:
Jun. 21, 1976
Applicant:
Inventors:
Assignee:
Thomson-CSF, Paris, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C25F / ; C25F / ;
U.S. Cl.
CPC ...
2041293 ; 20412955 ; 2042 / ;
Abstract
A method for drilling microscopic passages in a semiconductor body. The semiconductor 1 is incorporated into the anode of an electrolysis installation, one of its faces being in contact with the electrolyte 11 and the other containing a hole injection system. The holes migrate in the electric field from one face to the other; at the latter, dissolution of the semiconductor face in the electrolyte takes place. Gradually, passages are bored through the semiconductor along the trajectories of the holes. In the example, the holes are created photoelectrically in the gaps 2 between the opaque parts 4 applied to the transparent anode contact 3.