Plano, TX, United States of America

Hengchun Mao

This inventor holds 35 USPTO granted patents and 3 published patent applications and 2 EPO patents, primarily in Power Conversion Technology. Top assignees: Lucent Technologies Inc., Netpower Technologies, Inc., Other. Active years: 1999-2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hengchun Mao. Retrieved from https://idiyas.com/inventor/hengchun-mao-62cdtpba

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 35 

% Patents Active = 100.0

 

Average Co-Inventor Count = 1.7

ph-index = 16

Forward Citations = 643(Granted Patents)


Location History:

  • Dallas, TX (US) (1999 - 2000)
  • Collin, TX (US) (2001)
  • Plano, TX (US) (1999 - 2004)

Company Filing History:


Years Active: 1999-2004

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Areas of Expertise:
Synchronous Rectifier
Power Converter
Energy Recovery Circuit
Voltage Regulation
Power Factor Correction
Temperature Compensation
DC/DC Converter
Frequency Modulation
Multilevel Transformer
Snubber Circuit
Harmonic Reduction
Backup Power Supply
35 patents (USPTO):Explore Patents

Title: Inventor Hengchun Mao: Revolutionizing Technology in Plano

Introduction: Hengchun Mao, a visionary inventor based in Plano, TX, is renowned for his groundbreaking contributions to the field of technology.

Latest Patents: Mao holds several patents in the areas of artificial intelligence, robotics, and renewable energy, showcasing his innovative mindset and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Mao has worked with leading tech companies, spearheading projects that have pushed the boundaries of technological advancements.

Collaborations: Throughout his career, Mao has collaborated with top researchers, engineers, and scientists, fostering a culture of innovation and creativity in the tech industry.

Conclusion: Hengchun Mao's relentless pursuit of innovation and his passion for technology continue to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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