Ulm, Germany

Helmut Jung

This inventor holds 1 USPTO granted patent. Top assignee: United Monolithic Semiconductors Gmbh. Active years: 2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Helmut Jung. Retrieved from https://idiyas.com/inventor/helmut-jung-vdrytb6n

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2013

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1 patent (USPTO):Explore Patents

Title: Helmut Jung - Innovator in High Electron Mobility Transistors

Introduction

Helmut Jung is a notable inventor based in Ulm, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the development of high electron mobility transistors (HEMTs). His innovative work has led to advancements that enhance the performance and efficiency of electronic components.

Latest Patents

Helmut Jung holds a patent for a "Transistor with high electron mobility and inhomogeneous layer resistance of the guide channel." This invention focuses on reducing field spikes in the conduction channel of HEMT components, especially those based on Gallium Nitride (GaN). The patent proposes a method to adjust the sheet resistance of the conduction channel in a specific area to be higher than in adjacent regions, thereby improving the overall functionality of the device.

Career Highlights

Helmut Jung is associated with United Monolithic Semiconductors GmbH, where he applies his expertise in semiconductor technology. His work at the company has been instrumental in pushing the boundaries of what is possible in the field of high-frequency electronics.

Collaborations

Helmut has collaborated with Hervé Blanck, contributing to the advancement of semiconductor technologies through their combined expertise.

Conclusion

Helmut Jung's innovative contributions to the field of high electron mobility transistors exemplify the impact of dedicated inventors in advancing technology. His patent work continues to influence the development of efficient electronic components.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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