The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2013
Filed:
May. 12, 2011
Applicants:
Helmut Jung, Ulm, DE;
Hervé Blanck, Ulm, DE;
Inventors:
Helmut Jung, Ulm, DE;
Hervé Blanck, Ulm, DE;
Assignee:
United Monolithic Semiconductors GmbH, Ulm, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/072 (2012.01);
U.S. Cl.
CPC ...
Abstract
For an HEMT component, in particular on the basis of GaN, it is proposed, for the purpose of reducing field spikes in the conduction channel, in a partial section of the conduction channel between gate electrode and drain electrode, to set the sheet resistance of the conduction channel such that it is higher than in adjacent regions. Various measures for subsequently increasing the sheet resistance in an area-selective manner are specified.
Jung, Helmut. (2013). Transistor with high electron mobility and inhomogeneous layer resistance of the guide channel (U.S. Patent No. 8587032). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8587032
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile