Dresden, Germany

Helmut Hermann

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignees: Globalfoundries Inc., Leibniz-Institut Fuer Festkoerper-Und Werkstoffforschung Dresden E.v.. Active years: 2015.


 

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: Helmut Hermann: Innovator in Microelectronics

Introduction

Helmut Hermann is a notable inventor based in Dresden, Germany. He has made significant contributions to the fields of microelectronics and materials sciences. His work primarily focuses on developing innovative insulation materials for integrated circuits.

Latest Patents

Helmut Hermann holds a patent for an insulation material for integrated circuits and its use in semiconductor components. The invention addresses the need for insulation materials with dielectric constants of k ≤ 2 while maintaining good mechanical properties. The insulation material comprises at least Metal-Organic Frameworks (MOFs) and/or Covalent Organic Frameworks (COFs), which enhance the performance of integrated circuits.

Career Highlights

Throughout his career, Helmut Hermann has worked with esteemed organizations, including the Leibniz Institute for Solid State and Materials Research Dresden and GlobalFoundries Inc. His experience in these institutions has allowed him to advance his research and contribute to the development of cutting-edge technologies in microelectronics.

Collaborations

Helmut has collaborated with notable professionals in his field, including Gotthart Seifert and Konstyantyn Zagorodniy. These collaborations have enriched his research and fostered innovation in insulation materials for integrated circuits.

Conclusion

Helmut Hermann's contributions to microelectronics through his innovative insulation materials have paved the way for advancements in semiconductor technology. His work exemplifies the importance of research and collaboration in driving innovation in the field.

Profile summary based on public USPTO records.
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